Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene
نویسندگان
چکیده
منابع مشابه
Electronic strengthening of graphene by charge doping.
Graphene is known as the strongest 2D material in nature, yet we show that moderate charge doping of either electrons or holes can further enhance its ideal strength by up to ~17%, based on first-principles calculations. This unusual electronic enhancement, versus conventional structural enhancement, of the material's strength is achieved by an intriguing physical mechanism of charge doping cou...
متن کاملEngineering high charge transfer n-doping of graphene electrodes and its application to organic electronics.
Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90% reduction in its sheet resistance to ∼250 Ohm sq(-1). Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based dop...
متن کاملScreening and electrostatic doping in multilayer graphene systems MARCELO KURODA
Submitted for the MAR12 Meeting of The American Physical Society Screening and electrostatic doping in multilayer graphene systems MARCELO KURODA, J. TERSOFF, RAZVAN NISTOR, GLENN MARTYNA, IBM TJ Watson Research Center — We study the electrostatic screening in multilayer graphene systems using ab initio calculations and analytical models. First principles calculations reveal that oriented (Bern...
متن کاملElectrostatic Deposition of Large-Surface Graphene
This work describes a method for electrostatic deposition of graphene over a large area using controlled electrostatic exfoliation from a Highly Ordered Pyrolytic Graphite (HOPG) block. Deposition over 130 × 130 µm² with 96% coverage is achieved, which contrasts with sporadic micro-scale depositions of graphene with little control from previous works on electrostatic deposition. The deposition ...
متن کاملOptical separation of mechanical strain from charge doping in graphene.
Because of its superior stretchability, graphene exhibits rich structural deformation behaviours and its strain engineering has proven useful in modifying its electronic and magnetic properties. Despite the strain-sensitivity of the Raman G and 2D modes, the optical characterization of the native strain in graphene on silica substrates has been hampered by excess charges interfering with both m...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ACS Applied Electronic Materials
سال: 2020
ISSN: 2637-6113,2637-6113
DOI: 10.1021/acsaelm.0c00051